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RESISTRATIONS : 14

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  1. Hee-Dong Kim, Tae Geun Kim “Light receiving device having transparent electrode and manufacturing method of the same” 10-1439530, September 2, 2014.

  2. Hee-Dong Kim, Tae Geun Kim “Vertical light emitting diode having transparent electrode” 10-1436133, August 25, 2014.

  3. Hee-Dong Kim, Tae Geun Kim “Organic light emitting diode having transparent electrode where conducting filament formed” 10-1402037, May 26, 2014.

  4. Hee-Dong Kim, Tae Geun Kim “Light emitting diode having transparent electrode” 10-1332686, November 19, 2013.

  5. Hee-Dong Kim, Tae Geun Kim “Fabrication method of transparent electrode and semiconductor device using the same” 10-1321353, October 17, 2013.

  6. Hee-Dong Kim, Tae Geun Kim “Nonvolatile resistive memory device and manufacturing method of the same” 10-1179133, August 28, 2012.

  7. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “ReRAM memory device with multi-level and manufacturing method of the same” 10-1123736, February 28, 2012.

  8. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Device for non-volatile memory of multi-level program and method for fabricating thereof” 10-1027787, March 31, 2011.

  9. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Non-volatile memory device and the method for manufacturing the same” 10-1015828, February 11, 2011.

  10. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Non-volatile memory device and the method for manufacturing the same” 10-1039801, June 1, 2011.

  11. Hee-Dong Kim, Ho-Myoung An, Yujeong Seo, Kyoung Chan Kim, Tae Geun Kim “Non-volatile memory device and the method for manufacturing the same” 10-0890210, March 17, 2009.

  12. Hee-Dong Kim, Ho-Myoung An, Yujeong Seo, Kyoung Chan Kim, Tae Geun Kim “Device for non-volatile memory of multi-level program and method for fabricating thereof” 10-0871076, November 24, 2008.

  13. Hee-Dong Kim, Ho-Myoung An, Yu Jeong Seo, Kyoung Chan Kim, Tae Geun Kim “Device for non-volatile memory of multi-level program and method for fabricating thereof” 10-0871605, November 26, 2008.

  14. Hee-Dong Kim, Ho-Myoung An, Yu Jeong Seo, Kyoung Chan Kim, Tae Geun Kim “Device for non-volatile memory of multi-level program and method for fabricating thereof” 10-0868031, November 4, 2008

APPLICATIONS : 27 (TAIWAN : 1 & PCT : 6 )

  1. 김병환, 김희동 "빛물질을 이용한 유전 박막 제조 방법" 10-2015-0150690, 2015.11.24

  2. Hee-Dong Kim, Tae Geun Kim “Fabrication method of transparent electrode and semiconductor device using the same” TAIWAN/102121540, June 18, 2013.

  3. Hee-Dong Kim, Tae Geun Kim “Organic light emitting diode having transparent electrode where conducting filament formed” PCT/KR2013/004975, June 5, 2013.

  4. Hee-Dong Kim, Tae Geun Kim “Light receiving device having transparent electrode and manufacturing method of the same” PCT/KR2013/006803, July 30, 2013.

  5. Hee-Dong Kim, Tae Geun Kim “Vertical light emitting diode having transparent electrode” PCT/KR2013/006804, July 30, 2013.

  6. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Fabrication method of transparent electrode and semiconductor device using the same” PCT/KR2012/007254, September 10, 2012.

  7. Hee-Dong Kim, Tae Geun Kim “Light emitting diode having transparent electrode” PCT/KR2012/007256, September 10, 2012.

  8. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Fabrication and method of multi-bit switching nonvolatile memory devices with 3-dimension gate” PCT/KR2009/003508, June 29, 2009.

  9. Hee-Dong Kim, Tae Geun Kim “Vertical light emitting diode having transparent electrode” 10-2013- 0017915, February 20, 2013.

  10. Hee-Dong Kim, Tae Geun Kim “Light receiving device having transparent electrode and manufacturing method of the same” 10-2013-0020685, February 26, 2013.

  11. Hee-Dong Kim, Tae Geun Kim “Semiconductor Device Including Transparent Electrode and method for manufacturing the same” 10-2013-0077913, July 3, 2013.

  12. Hee-Dong Kim, Tae Geun Kim “Organic light emitting diode having transparent electrode where conducting filament formed” 10-2012-0103754, September 19, 2012.

  13. Hee-Dong Kim, Tae Geun Kim “Fabrication method of transparent electrode and semiconductor device using the same” 10-2012-0050932, May 14, 2012.

  14. Hee-Dong Kim, Tae Geun Kim “Light emitting diode having transparent electrode” 10-2012-0075651, July 11, 2012.

  15. Hee-Dong Kim, Tae Geun Kim “Organic light emitting diode having transparent electrode where conducting filament formed” 10-2012-0103754, September 19, 2012.

  16. Hee-Dong Kim, Tae Geun Kim “Nonvolatile resistive memory device and manufacturing method of the same” 10-2011-0015521, February 22, 2011.

  17. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “ReRAM memory device with multi-level and manufacturing method of the same” 10-2010-0033448, April 12, 2010.

  18. Hee-Dong Kim, Ji Won Yang, Ho-Myoung An, Tae Geun Kim “Nonvolatile resistive memory device and manufacturing method of the same” 10-2010-0075957, August 6, 2010.

  19. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Fabrication and method of multi-bit switching nonvolatile memory devices with 3-dimension gate” 10-2009-0051664, June 10, 2009. 

  20. Hee-Dong Kim, Tae Geun Kim “Non-volatile memory device and method for manufacturing the same” 10-2009-0062710, July 9, 2009.

  21. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Device for non-volatile memory of multi-level program and method for fabricating thereof” 10-2009-0135602, December 31, 2009.

  22. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Non-volatile memory device and the method for manufacturing the same” 10-2008-0097961, October 7, 2008.

  23. Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Non-volatile memory device and the method for manufacturing the same” 10-2007-0086592, August 28, 2008.

  24. Hee-Dong Kim, Yu Jeong Seo, Kyoung Chan Kim, Ho-Myoung An, Tae Geun Kim “Non-volatile memory device and the method for manufacturing the same” 10-2007-0086921, August 29, 2007.

  25. Hee-Dong Kim, Yu Jeong Seo, Kyoung Chan Kim, Ho-Myoung An, Tae Geun Kim “Non-volatile memory device capable of multi bit programming and the method for manufacturing the same” 10-2007-0087801, August 30, 2007.

  26. Hee-Dong Kim, Yu Jeong Seo, Kyoung Chan Kim, Ho-Myoung An, Tae Geun Kim “Non-volatile memory device capable of multi bit programing and the method for manufacturing the same” 10-2007-0088637, August 31, 2007.

  27. Hee-Dong Kim, Yu Jeong Seo, Kyoung Chan Kim, Ho-Myoung An, Tae Geun Kim “Non-volatile memory device and the method for manufacturing the same” 10-2007-0076056, July 27, 2007.

 

 

 

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