2024 (Published SCI : 13)
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Myungsoo Chea, Doowon Lee, and Hee-Dong Kim*, Dynamic Response and Swift Recovery of Filament Heater-integrated Low-power Transparent CNT Gas Sensor, Adv. Funct. Mater. 2024, 2405260, IF : 13.3 JCR : 3.1%
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Ibtisam Ahmad, Doowon Lee, Myoungsu Chae, Hee-Dong Kim*, Advanced recovery and enhanced humidity tolerance of CNTs gas sensor using a filament heater, Chemical Engineering Journal, Volume 496, 15 September 2024, 154014, IF : 18.5 JCR : 4.1%
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Doowon Lee, Myungsoo Chea, and Hee-Dong Kim*, Response Characteristic in Discontinuous NO Gas Flows for Boron Nitride Memristor Gas Sensor Devices, Sensors and Actuator B, Volume 401, 15 February 2024, 135063 : IF : 8.4 JCR : 0.8%
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Mohsin Ali, Doowon Lee, Myoungsu Chae, Ibtisam Ahmad, and Hee-Dong Kim*, Advances in MXene-based Synaptic Devices and Sensors: Review, Materials Today Physics, Volume 45, June 2024, 101456 : IF : 11.5 JCR : 8.4%
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Ibtisam Ahmad, Doowon Lee, Myoungsu Chae, Taegi Kim, Mohsin Ali, Hee-Dong Kim*, Improved Resistive Switching Characteristics Observed in Amorphous Boron Nitride-based RRAM Device via Oxygen Doping: A Study based on Bulk and Interface Traps Analysis, Materials Science in Semiconductor Processing, Volume 184, December 2024, 108805, IF : 4.2 JCR : 25.28%
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Myungsoo Chea, Doowon Lee, and Hee-Dong Kim*, Influence of en-APTAS membrane on NO gas selectivity of HfO<sub>2</sub>-based memristor gas sensors, 2024 Jpn. J. Appl. Phys. 63 03SP07 (2024)
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Taegi Kim, Myungsoo Chea, Doowon Lee, and Hee-Dong Kim*, Enhanced optical and electrical properties of indium tin oxide for solar cell applications via post-microwave treatment, Optical Materials Volume 149, March 2024, 115093 IF: 3.9 JCR : 27.5%
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Jinsu Jung, Myungsoo Chea, Doowon Lee, and Hee-Dong Kim*, Influence on post-treatment process on optical and electrical properties of IZO thin films, Transactions on Electrical and Electronic Materials, Volume 25, pages 347–355, (2024)
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Myungsoo Chea, Doowon Lee, and Hee-Dong Kim*, Low-power Consumption IGZO Memristor-based Gas Sensor Embedded in an IoT Monitoring System for Isopropanol Alcohol Gas, Micromachines 2024, 15(1), 77; https://doi.org/10.3390/mi15010077
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Taegi Kim, Doowon Lee, Myungsoo Chea, Kyeong Heon Kim, and Hee-Dong Kim*, Enhancing the resistive switching properties of transparent HfO2-based memristor devices for reliable gasistor applications, Sensors Vol. 24, no.19, 6382 Oct. 2024, IF: 3.4 JCR : 31.58%
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Chanmin Hwang, Taegi Kim, Yuseong Jang, Doowon Lee, Hee-Dong Kim* "Enhanced Optical and Electrical Properties of IGZO/Ag/IGZO for Solar Cell Application via Post-Rapid Thermal Annealing", Nanomaterials vol. 14, no. 22, 2024
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Yuseong Jang, Chanmin Hwang, Sanggyu Bang, Hee-Dong Kim* "Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post Annealing Process", Inorganics 2024, 12(12), 299
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Taegi Kim, Hee-Dong Kim* "The Superior Response and High Reproducibility of the Memristor-Integrated Low-Power Transparent SnO₂ Gas Sensor", Micromachines 2024, 15(12), 1411
2023 (Published SCI : 13)
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Myungsoo Chea, Doowon Lee, Jinsu Jung, and Hee-Dong Kim*, Enhanced Memristor-based Gas Sensor for Fast Detection Using a Porous Carbon Nanotube Top Electrode with Membrane, Cell Reports Physical Science, Volume 4, Issue 11, 15 November 2023, 101659
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Myungsoo Chea, Doowon Lee, Sungho Kim, and Hee-Dong Kim*, NO Sensing Properties of BN-based Memristor Sensor Array for Real-time NO Monitoring-Systems, Sensors and Actuator B, Volume 394, 1 November 2023, 134373
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Ibtisam Ahmad, Doowon Lee, Shahid Mehmood, Myoungsu Chae, Awais Ali, Jamshed Aftab, Arshad Saleem Bhatti, Shumaila Karamat, and Hee-Dong Kim*,Comprehensive analysis of reaction mechanisms in reduced graphene oxide and hematite heterostructure gas sensors, JALCOM, Volume 967, 10 December 2023, 171698
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Doowon Lee, and Hee-Dong Kim*, Improvement in the energy conversion efficiency for silicon heterojunction solar cells due to SiOX inserted with conducting filaments, JALCOM Volume 932, 15 January 2023, 167669
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Shania Rehman, Muhammad Farooq Khan, Hee- Dong Kim, Sungho Kim, "Energy-efficient and reconfigurable complementary filter based on analog–digital hybrid computing with SnS2 memtransistor, Nano Energy, Volume 109, May 2023, 108333
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Doowon Lee, Jinsu Jung, Sungho Kim, and Hee-Dong Kim*, Gas Detection and Recovery Characteristics at Room Temperature Observed in a Zr3N4-based Memristor Sensor Array, Sensors and Actuator B Volume 376, Part B, 1 February 2023, 132993
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Doowon Lee, Hee-Dong Kim*, Ultra-low operation current and abnormal bipolar switching phenomena of hydrogen-passivated HfO2 memristive devices for low power artificial neural network applications, Ceramics int., Volume 49, Issue 11, Part A, 1 June 2023, Pages 17497-17505
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Doowon Lee, Myoungsu Chae, Jong-Ryeol Kim, and Hee-Dong Kim* "Effects of Al2O3 Thickness in Silicon Heterojunction Solar Cell", Inorganics 2023, 11(3), 106
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Doowon Lee, Myungsoo Chea, Jinsu Jung, Hee-Dong Kim "Correlation between sensing accuracy and read margin of a memristor-based NO gas sensor array estimated by neural network analysis", ACS Sensors ACS Sens. 2023, 8, 5, 2105–2114
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Doowon Lee, Myoungsu Chae, Ibtisam Ahmad, Jong-Ryeol Kim, Hee-Dong Kim* "Influence of WO3-based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells", Nanomaterials vol. 13, no. 9, 2023
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Doowon Lee, Hee-Dong Kim* "Effect of Hydrogen Annealing on Performances of BN-based RRAM", Nanomaterials 2023, 13(10), 1665
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Doowon Lee, Kyeong Heon Kim, Hee-Dong Kim* "Thickness Optimization of Charge Transport Layers on Perovskite Solar Cells for Aerospace Applications", Nanomaterials 2023, 13(12), 1848; https://doi.org/10.3390/nano13121848
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Shania Rehman, Muhammad Farooq Khan, Hee- Dong Kim, Sungho Kim, "Self–tuning PID controller based on analog–digital hybrid computing with double–gate SnS2 memtransistor, Nanoscale, 2023,15, 13675-13684
2022 (Total SCI: 7)
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Shania Rehman, Muhammad Farooq Khan, Hee-Dong Kim & Sungho Kim, "Analog–digital hybrid computing with SnS2 memtransistor for low-powered sensor fusion" Nature communications, 13, Article number: 2804 (2022)
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Dongjoo Bae, Duwon Lee, Sungho Kim & Hee-Dong Kim "Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation" IEEE Access, vol. 10, pp. 6622-6628, 2022, doi: 10.1109/ACCESS.2022.3142368.
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Dongjoo Bae, Duwon Lee, Sungho Kim & Hee-Dong Kim "Correlation between Resistive Switching Characteristics and Density of Traps Observed in Zr3N2 Resistive Switching Memory Devices with TiN Barrier Electrode" Ceramics int., Volume 48, Issue 14, 15 July 2022, Pages 20478-20484
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Duwon Lee, Dongjoo Bae, Myungsoo Chae & Hee-Dong Kim "High sensitivity of isopropyl alcohol gas sensor based on memristor device operated at room temperature" J. Korean Phys. Soc. 80, pages1065–1070 (2022). https://doi.org/10.1007/s40042-022-00470-6
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Doowon Lee, Ahreum Lee, and Hee-Dong Kim* "IZO/ITO Double-layered Transparent Conductive Oxide for Silicon Heterojunction Solar Cell" IEEE ACCESS, vol. 10, pp. 77170 - 77175, 2022, odi : 10.1109/ACCESS.2022.3192646
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Doowon Lee, Jinsu Jung, Kyeong Heon Kim, Dongjoo Bae, Myungsoo Chea, Sungho Kim, and Hee-dong Kim* "Excellent oxygen sensing characteristics observed in IGZO based gasistor in mixed gas ambient at room temperature" ACS sensors, 2022, 7, 9, 2493-2494
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Myungsoo Chea, Doowon Lee, and Hee-Dong Kim* "Improved electrical and optical properties of IGZO transparent conductive oxide due to microwave treatment: Application to silicon solar cells", IEEE ACCESS, vol. 10, pp. 90401-90407, 2022, doi: 10.1109/ACCESS.2022.3201891
2021 (Total SCI: 8)
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Min Ju Yun, Kyeong Heon Kim, Dongju Bea, Jinsu Jung, Sungjun Kim & Hee-Dong Kim "Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment" Journal of Electrical Engineering & Technology,https://doi.org/10.1007/s42835-020-00633-0
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Jinsu Jung, Dongju Bea, Sungho Kim & Hee-Dong Kim "Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method" Coatings, 2021, 11(2), 197; https://doi.org/10.3390/coatings11020197
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Jinsu Jung, Dongju Bea, Sungho Kim & Hee-Dong Kim "Self-rectifying resistive switching phenomena observed in Ti/ZrN/Pt/p-Si structures for cross-bar array memory applications" Applied Physics Letters, 2021, 118(11), 112106 ; https://doi.org/10.1063/5.0036528
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Dongju Bea, Duwon Lee, Jinsu Jung, Sungho Kim & Hee-Dong Kim "Self-rectifying resistive switching characteristics of Ti/Zr3N2/p-Si capacitor for array applications" Ceramics International, Volume 47, Issue 15, 1 August 2021, Pages 21943-21949
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Sungho Kim; Moon-Seok Kim; Yongwoo Lee; Hee-Dong Kim; Yang-Kyu Choi; Sung-Jin Choi, Low-Power True Random Number Generator Based on Randomly Distributed Carbon Nanotube Networks, IEEE ACCESS, 2021
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Jinsu Jung, Duwon Lee, Sungho Kim & Hee-Dong Kim "Self-rectifying characteristics observed in O-doped ZrN resistive switching memory devices using Schottky barrier type bottom electrode" IEEE ACCESS, 2021
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Minju Yun, Duwon Lee, Sungho Kim, Christian Wenger & Hee-Dong Kim "A Nonlinear Resistive Switching Behaviors of Ni/HfO2/TiN Memory Structures for Self-rectifying Resistive Switching Memory" Materials Characterization (2021)
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Duwon Lee, Minju Yun, Kyeong Heon Kim, Sungho Kim, Hee-Dong Kim "Advanced recovery and high-sensitive properties of memristor based gas sensor devices operated at room temperature," ACS Sensors (2021)
2020 (Total SCI: 5)
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Kyeong Heon Kim, Min JuYun, Sungho Kim, Hee-Dong Kim "Improved contact properties of single-walled carbon nanotube on p-AlGaN layers after microwave post-treatment",Journals of Chemistry and Physics Volume 252, 15 September 2020, 123471
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Sung Joon Yoon, Ji-Ho Ryu, Muhammad Ismail, Ying-Chen Chen, Yao-Feng Chang, Min Ju Yun, Hee-Dong Kim, and Sungjun Kim "Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in a Cu/SiOx/p++-Si device" Appl. Phys. Lett. 115, 212102 (2019); https://doi.org/10.1063/1.5109081
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Sungho Kim, Yongwoo Lee, Hee-Dong Kim and Sung-Jin Choi "Parallel weight update protocol for a carbon nanotube synaptic transistor array for accelerating neuromorphic computing†" Nanoscale, 2020,12, 2040-2046
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Sungho Kim, Yongwoo Lee, Hee-Dong Kim and Sung-Jin Choi "16-Bit Fixed-Point Number Multiplication With CNT Transistor Dot-Product Engine" IEEEACCESS , 2020, 8, 133597-133604
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Sungho Kim, Yongwoo Lee, Hee-Dong Kim and Sung-Jin Choi "A tactile sensor system with sensory neurons and a perceptual synaptic network based on semivolatile carbon nanotube transistors" NPG Asia Materials , 2020, 12, 76
2019 (Total SCI: 4)
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Min Ju Yun, Sungjun Kim, Sungho Kim and Hee-Dong Kim "Memory state protected from leakage current in Ti/SiN/NiN/Pt bilayer resistive random-access memory devices for array applications", Journal ofNanoscience and Nanotechnology, Semicond. Sci. Technol. 34 075030
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Sung Joon Yoon, Ji-Ho Ryu, Muhammad Ismail, Ying-Chen Chen, Yao-Feng Chang, Min Ju Yun, Hee-Dong Kim, and Sungjun Kim "Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in a Cu/SiOx/p++-Si device" Appl. Phys. Lett. 115, 212102 (2019); https://doi.org/10.1063/1.5109081
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Sungho Kim, Bongsik Choi, Jinsu Yoon, Yongwoo Lee, Hee-Dong Kim, Min-Ho Kang & Sung-Jin Choi "Binarized Neural Network with Silicon Nanosheet Synaptic Transistors for Supervised Pattern Classification" Scientific Reports volume 9, Article number: 11705 (2019)
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Sungho Kim, Hee-Dong Kim & Sung-Jin Choi "Impact of Synaptic Device Variations on Classification Accuracy in a Binarized Neural Network" Scientific Reports volume 9, Article number: 15237 (2019)
2018 (Total SCI: 8)
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Min Ju Yun, Sungho Kim, and Hee-Dong Kim, "Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode", Journal of Alloys and Compounds, Volume 742, 25 April 2018, pp. 822-827
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Min Ju Yun, Kyeong Heon Kim, Sungho Kim, and Hee-Dong Kim, "Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process", Journal ofNanoscience and Nanotechnology, vol. 18. no. 9, September 2018 , pp. 5947-5952.
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Sang-Jae Park, Sungho Kim, Myeong-Lik Seol, Seung-Bae Jeon, Il-Woong Cho, Daewon Kim, and Yang-Kyu Choi, "A multi-directional wind based triboelectric generator with investigation of frequency effects", Extreme Mechanics Letters, Vol. 19, pp. 46-53, 2018
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Sungho Kim, Meehyun Lim, Yeamin Kim, Hee-Dong Kim, and Sung-Jin Choi, "Impact of Synaptic Device Variation on Pattern Recognition Accuracy in a Hardware Neural Network", Scientific Reports, 2638, 2018
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Yongwoo Lee, Jungmin Han, Bongsik Choi, Jinsu Yoon, Jinhee Park, Yaemin Kim, Jieun Lee, Dae Hwan Kim, Dong Myong Kim, Meehyun Lim, Min-Ho Kang, Sungho Kim, and Sung-Jin Choi, “Three-Dimensionally Printed Microelectromechanical Switches”, ACS Applied Materials & Interfaces, 10, pp. 15841-15846, 2018
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Sungho Kim, Bongsik Choi, Meehyun Lim, Hee-Dong Kim, and Sung-Jin Choi, "Synaptic device network architecture with feature extraction for unsupervised image classfication", Small (accepted)
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Jinsu Yoon, Jungmin Han, Bongsik Choi, Yongwoo Lee, Yeamin Kim, Jinhee Park, Meehyun Lim, Min-Ho Kang, Dae Hwan Kim, Dong Myong Kim, Sungho Kim, and Sung-Jin Choi, “A Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics”, ACS Nano, online published
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Yongwoo Lee, Bongsik Choi, Jinsu Yoon, Yeamin Kim, Jinhee Park, Hyo-Jin Kim, Dae Hwan Kim, Dong Myong Kim, Sungho Kim, and Sung-Jin Choi, “Highly transparent tactile sensor based on a percolated carbon nanotube network”, AIP Advances, 8, 065109, 2018
2017 (Total SCI: 6)
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Jinsu Yoon, Juhee Lee, Bongsik Choi, Dongil Lee, Dae Hwan Kim, Dong Myong Kim, Dong-Il Moon, Meehyun Lim, Sungho Kim, and Sung-Jin Choi, “Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics”, Nano Research, Vol. 10, pp. 87-96, Jan. 2017
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Sungho Kim, Bongsik Choi, Meehyun Lim, Jinsu Yoon, Juhee Lee, Hee-Dong Kim, and Sung-Jin Choi, “Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol”, ACS Nano, published in online (DOI: 10.1021/acsnano.6b07894), Feb. 2017
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Joobeom Yun, Ki-Woong Park, Youngjoo Shin, and Hee-Dong Kim, “An Efficient Stream Cipher for Resistive RAM”, IEICE Electronics Express, Vol. 14, No.7, pp. 1-6, March 21, 2017
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Min Ju Yun, Kyeong Heon Kim, Eui Jung Myeong, Joobeom Yun, and Hee-Dong Kim, "Encryption of Programmed Data of Resistive Random Access Memory Devices for Information Protection", Journal of Nanoscience and Nanotechnology, Vol. 17, pp.7246-7249, July 24, 2017
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Jae-Hyuk Ahn, Sung-Jin Choi, Maesoon Im, Sungho Kim, Chang-Hoon Kim, Jee-Yeon Kim, Tae Jung Park, Sang Yup Lee, and Yang-Kyu Choi, “Charge and dielectric effects of biomolecules on electrical characteristics of nanowire FET biosensors”, Applied Physics Letters, Vol. 111, p. 113701, 2017
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Jinsu Yoon, Meehyun Lim, Bongsik Choi, Dong Myong Kim, Dae Hwan Kim, Sungho Kim, and Sung-Jin Choi, "Determination of individual contact interface in carbon nanotube network-based transistors", Scientific Reports, 7, p. 5433, 2017
2016 (Total SCI: 12)
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Sungho Kim, Hee-Dong Kim, and Sung-Jin Choi “Intrinsic threshold switching responses in AsTeSi thin films”Journal of Alloys and Compounds, vol. 667, pp.91-95 (15 May 2016)
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Hee-Dong Kim, Min Ju Yun, and Kyeong Heon Kim, Sungho Kim “Oxygen-doped Zirconium Nitride Based Transparent Resistive Random Access Memory Devices Fabricated by Radio Frequency Sputtering Method” Journal of Alloys and Compounds, vol. 675, pp.183-186 (5 August 2016)
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Sungho Kim, Hee-Dong Kim, and Sung-Jin Choi “Compact Two State Variable Second Order Memristor Model” Small, vol.12, no. 24, pp. 3320-3326 (24 June 2016)
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Hee-Dong Kim, Robin Roeloffs, Jens Schmidt, Christian Walczyk, Bernd Tillack, Christian Wenger “Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition” Nature Scientific Reports, vol.6, pp. 28155(1-11) (17 June 2016)
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Hee-Dong Kim, Min Ju Yun, Sungho Kim, and Joobeom Yun "Stable Bipolar Resistive Switching Characteristics Observed in 8×8 Pt/NiNx/Ti/TiN Crossbar Array Structures for Resistive Random Access Memories”, Journal of Nanoscience and Nanotechnology, Vol. 16, 10276–10279, 2016
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Hee-Dong Kim, Min Ju Yun, and Sungho Kim "Resistive Switching Characteristics of Al/Si3N4/p-Si MIS-Based Resistive Switching Memory Devices”, Journal of Korean Physical Society, Vol. 69, No. 3, August 2016, pp. 435∼438
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Hee-Dong Kim, Min Ju Yun, and Sungho Kim "Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices”, Journal of Korean Physical Society, Vol. 69, No. 3, August 2016, pp. 439∼442
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Wontak Joo, Jae Hak Lee, Sung Moo Choi, Hee-Dong Kim, and Sungho Kim "Comprehensive Study of Write Operation Scheme in Multi-Level Resistive Switching Memory Array”, Journal of Nanoscience and Nanotechnology, Vol. 16, pp. 11391-11395, 2016
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Byungwhan Kim and Hee-Dong Kim Film of Matter in Sunlight Dried Water”, PNAS 2015, submitted
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Jinsu Yoon, Juhee Lee, Bongsik Choi, Dongil Lee, Dae Hwan Kim, Dong Myong Kim, Dong-Il Moon, Meehyun Lim, Sungho Kim, and Sung-Jin Choi, “Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics”, Nano Research, online publication
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D. S. Jeong, K. M. Kim, S. Kim, B. J. Choi, and C. S. Hwang, “Memristors for Energy-Efficient New Computing Paradigms”, Advanced Electronic Materials, Vol. 2, p. 1600090, Aug. 2016 (front cover 논문 선정)
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J. Yoon, B. Choi, S. Choi, J. Lee, J. Lee, M. Jeon, Y. Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, S. Kim, and S. -J. Choi, “Evaluation of interface trap densities and quantum capacitance in carbon nanotube network thin-film transistors”, Nanotechnology, Vol. 27, p. 295704, Jun. 2016
2015 (SCI: 9)
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Seok Man Hong, Hee-Dong Kim, Min Ju Yun, Ju Hyun Park, Dong Su Jeon, Ho-Myoung An and Tae Geun Kim “Improvement of Resistive Switching in Tungsten Oxide Thin Films by Nitrogen Doping” Thin Solid Films, Vol. 583, pp.81-85 (29 March 2015). IF: 1.922
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Hee-Dong Kim, Min Ju Yun, Tae Geun Kim “Forming Free Resistive Switching Characteristics and Improved Reliability in Sub-stoichiometric Niobium Nitride Resistive Switching Layer” Physica Status Solidi (RRL), Vol. 6, No.4, pp.264-268 (April 2015). IF: 2.142
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Hee-Dong Kim, Min Ju Yun, Sung Ho Kim “Self-rectifying resistive switching behavior observed in Si3N4-based resistive random access memory devices” Journal of Alloys and Compounds, Vol. 651, pp.340-343 (5 December 2015). IF: 2.999 (IF: <top 5%, ES <top 1%)
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Sungho Kim, Hee-Dong Kim, and Sung-Jin Choi “Numerical study of read scheme in one-selector one-resistor crossbar array” Solid-State Electronics, Vol. 114, pp.80-86, December 2015. IF: 1.504
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Hee-Dong Kim, Felice Crupi, Mindaugas Lukosius, Andreas Trusch, Christian Walczyk, Christian Wenger “22. JVST B_Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods” Journal of Vacuum Science & Technology B, Vol. 33, No.5, pp.052204 (11 August 2015). IF: 1.464
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Hee-Dong Kim, Min Ju Yun, Sung Ho Kim “All ITO-Based Transparent Resistive Switching Random Access Memory Using Oxygen Doping Method” Journal of Alloys and Compounds, Vol. 653, pp.534-538 (25 December 2015). IF: 2.999 (IF: <top 5%, ES <top 1%)
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Hee-Dong Kim, Kyeong Heon, Ho-Myoung An, Tae Geun Kim “Charge Trap Flash Memory Using Zirconium Nitride Based Memristor Switches” Journal of Physics D: Applied Physics, Vol. 48, No. 44, pp. 445102(6p) (8 October 2015) IF: 2.721 (IF: <top 18%, ES <top 8%)
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Hee-Dong Kim, Su Jin Kim, Kyeong Heon Kim, and Tae Geun Kim “Fabrication of Conducting-Filament-Embedded Indium Tin Oxide Electrodes: Application to Lateral-type Gallium Nitride Light-Emitting Diodes” Optics Express, Vol. 23, No. 22, pp. 28775-28783 (2 November 2015). IF: 3.488 (IF<top 12%, ES <top 1%)
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Sungho Kim, Jinsu Yoon, Hee-Dong Kim, and Sung-Jin Choi “Carbon nanotube synaptic transistor network for pattern recongnition” ACS Applied Materials and Interface, Accepted 2015 IF: 6.723 (IF<top 8%, ES <top 5%)
2014 (SCI: 12)
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Hee-Dong Kim, Ho-Myoung An, Kyoung Heon Kim, Su Jin Kim, Chi Sun Kim, Jaehee Cho, E. Fred Schubert, Tae Geun Kim “A Universal Method of Producing Transparent Electrodes Using Wide-Bandgap Materials: Direct Ohmic Contact to p-AlGaN” Advanced Functional Materials, Vol. 24, No. 11, pp. 1575-1581 (19 March 2014). IF: 12.311
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Hee-Dong Kim, Minju Yun, Tae Geun Kim “Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications” Applied Physics Letters, Vol. 105, No. 21, pp. 213510(4) (24 November 2014). IF: 3.569
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Hee-Dong Kim, MiN Ju Yun, Seok Man Hong, Ju Hyun Park, Dong Su Jeon, Tae Geun Kim “Impact of roughness of bottom electrodes on the resistive switching properties of platinum/nickel nitride/nickel 1 × 1 crossbar array resistive random access memory cells” Microelectronic Engineering, Vol. 24, No. 11, pp. 1575-1581 (19 March 2014). IF: 1.338
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Hee-Dong Kim, Min Ju Yun, Jae Hoon Lee, Kyoung Heon Kim, and Tae Geun Kim “Transparent Multilevel Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method” Scientific Reports (Nature Publishing Group), Vol. 4, pp. 4614 (9 April 2014). IF: 5.078
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Hee-Dong Kim, Min Ju Yun, Seok Man Hong, and Tae Geun Kim “Effect of Nanopyramid Bottom Electrodes on Bipolar Resistive Switching Phenomena in Nickel Nitride Films-Based Crossbar Array” Nanotechnology, Vol. 25, No. 12, pp. 125201(8) (24 March 2014). IF: 3.672
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Hee-Dong Kim, Min Ju Yun, Seok Man Hong, and Tae Geun Kim “Size-Dependent Resistive Switching Properties of the Active Region in NiN-Based Crossbar Array Resistive Random Access Memory” Journal of Nanoscience and Nanotechnology, Vol. 14, No. 12, pp. pp. 9088-9091(4) (December 2014). IF: 1.339
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Su Jin Kim, Hee-Dong Kim, Kyoung Heon Kim, Hee Woong Shin, Il Ki Han, and Tae Geun Kim “Scientific Reports (Nature Publishing Group), Vol. 4, pp. 5827 (25 July 2014). IF: 5.078 Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED ”
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Ju Hyun Park, Hee-Dong Kim, Seok Man Hong, Min Ju Yun, Dong Su Jeon, and Tae Geun Kim “Improved Resistive Switching Phenomena Observed in SiNx-Based Resistive Switching Memory Through Oxygen Doping Process” Physica Status Solidi (RRL), Vol. 8, No.3, pp.239-242 (March 2014). IF: 2.142
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Hee Woong Shin, Ju Hyun Park, Ho Young Chung, Kyeong Heon Kim, Hee-Dong Kim, and Tae Geun Kim “Highly uniform resistive-switching in SiN nanorod devices fabricated using nanosphere lithography” Applied Physics Express, Vol. 7, No. 2, p.024202 (16 January 2014). IF: 2.429
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Byeong Ryong Lee, Jae Hoon Lee, Hee-Dong Kim, and Tae Geun Kim “PEDOT:PSS and AuCl3 doped RGO/SWNTs Films-Based Transparent Conductive Electrodes for Ultraviolet Light Emitting Diodes” Journal of Nanoscience and Nanotechnology, Vol. 14, No. 12, pp. 9114-9118(5) (December 2014). IF: 1.556
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Heon Kyeong Kim, Hee-Dong Kim, and Tae Geun Kim “High conductivity and ultraviolet band transparency of single-walled carbon nanotube films bridged with gold nanoparticles” Journal of Nanoscience and Nanotechnology, Vol. 14, No. 12, pp. 9092-9096(5) (December 2014). IF: 1.556
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Min Ju Yun, Hee-Dong Kim, Seok Man Hong, Ju Hyun Park, Dong Su Jeon, and Tae Geun Kim “The effect of embedded metal nanocrystals on the resistive switching characteristics in NiN based resistive random access memory cells” Journal of Applied Physics, Vol. 115, No. 9, p.094305 (5 March 2014). IF: 2.276
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Sukwon Kim,Su Jin Kim, Kyeong Heon Kim, Hee-Dong Kim, and Tae Geun Kim “Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes” Physica Status Solidi A, Vol. 211, No. 11, pp. 2569-2573 (November 2014). IF: 1.616
2013 (SCI : 14)
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Hee-Dong Kim, Ho-Myoung An, and Tae Geun Kim “Bipolar Resistive Switching Phenomena and Resistive Switching Mechanisms Observed in Zirconium Nitride-based Resistive Switching Memory Cells” IEEE Transactions on Device and Materials Reliability, Vol. 13, No. 1, pp. 252-257 (7 March 2013). IF: 1.890
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Hee-Dong Kim, Min Ju Yu, Seok Man Hong, Ho-Myoung An, and Tae Geun Kim “Bias Temperature Instability Analysis on Memory Properties Improved by Hydrogen Annealing Treatment in Ti/HfOx/Pt Capacitors” Physica Status Solidi-Rapid Research Letters, Vol. 7, No. 7, pp. 497-500 (12 June 2013). IF: 2.142
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Hee-Dong Kim, Min Ju Yun, Seok Man Hong, Ho-Myoung An, and Tae Geun Kim “Improved Reliability of Ti/ZrN/Pt Resistive Switching Memory Cells Using Hydrogen Post-annealing Process” Journal of Vacuum Science and Technology B, Vol. 31, No. 4, pp. 041205 (16 July 2013). IF: 1.464
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Hee-Dong Kim, Ho-Myoung An, Seok Man Hong, and Tae Geun Kim “Forming-free SiN-based resistive switching memory prepared by an RF sputtering” Physica Status Solidi (A), Vol. 210, No. 9, pp.1882-1827 (September 2013). IF: 1.616
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Ho-Myoung An, Journal of Nanoscience and Nanotechnology, Vol. 13, No.5, p.3293-3297 (May 2013). IF: 1.339 Hee-Dong Kim, Byungcheul Kim, and Tae Geun Kim “A Four-bit-per-cell program Method with Substrate-bias Assisted Hot Electron Injection for Charge Trap Flash Memory devices”
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Min Ju Yun, Thin Solid Films, Vol. 547, No.29, pp.95-98 (November 2013). IF: 1.922 Hee-Dong Kim , Kyeong Heon Kim, Hwan Jun Sung, Sang Young Park, Ho-Myoung An, and Tae Geun Kim “Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes”
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Ho-Myoung An, Materials Research Bulletin, Vol. 48, No.12, pp.5084-5087 (December 2013). IF: 2.368 Hee-Dong Kim , and Tae Geun Kim “Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications”
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Seok Man Hong, Materials Research Bulletin, Vol. 48, No.12, pp.5080-5083 (December 2013). IF: 2.368 Hee-Dong Kim , Ho-Myoung An, and Tae Geun Kim “Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility”
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Soyun park, Jae Hyuk Lee, Hee-Dong Kim, Seok Man Hong, Ho-Myoung An, and Tae Geun Kim “Resistive switching characteristics of Sol-Gel-based ZnO nanorods fabricated on flexible substrates” Physica Status Solidi (RRL), Vol. 7, No.7, pp.493-496 (14 June 2013). IF: 2.142
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Seok Man Hong, IEEE Electron Device Letters, Vol. 34, No.9, pp.1181-1183 6 (September 2013). IF: 2.754 Hee-Dong Kim , Ho-Myoung An, and Tae Geun Kim “Effect of Work Function Difference between Top and Bottom Electrodes on the Resistive Switching Properties of SiN films”
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Ho Young Chung, Kie Young Woo, Su Jin Kim, Kyeong Heon Kim, Superlattice and Microsturcture, Vol. 64, pp.1-6 (December 2013). IF: 1.564 Hee-Dong Kim , and Tae Geun Kim “Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers”
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Min Ju Yun, Journal of Vacuum Science and Technology B (Letters), Vol. 31, No.6, pp.060601 (8 October 2013). IF: 1.464 Hee-Dong Kim , and Tae Geun Kim “Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering”
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Jae Hoon Lee, Kie Young Woo, Kyeong Heon Kim, Optics Letters, Vol. 38, No. 23, pp.5055-5058 (1 December 2013). IF: 3.292 Hee-Dong Kim , and Tae Geun Kim “ITO/Ag/ITO Multilayer-Based Transparent Conductive Electrodes for Ultraviolet Light-Emitting Diodes”
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Heon Kyeong Kim, Ho-Myoung An, Nanoscale Research Letters, Vol. 8, No.2, pp.507 (2 December 2013). IF: 3.008 Hee-Dong Kim , and Tae Geun Kim “Transparent conductive oxide films mixed with gallium oxide nanoparticles/single-wall carbon nanotubes layer for deep ultraviolet light-emitting diodes”
2012 (SCI : 6)
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Hee-Dong Kim, Ho-Myoung An, Seok Man Hong and Tae Geun Kim “Unipolar Resistive Switching Phenomena in Fully Transparent SiN-based Memory Cells” Semiconductor Science and Technology, Vol. 27, No. 12, pp.125020 (12 November 2012). IF: 2.206
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Hee-Dong Kim, Ho-Myoung An, and Tae Geun Kim “Resistive-switching Behavior in Ti/Si3N4/Ti Memory Structures for ReRAM Applications” Microelectronic Engineering, Vol. 98, No. MNE2011-PART2, pp.351-354 (1 October 2012). IF: 1.338
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Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells” The article was selected in chapter 5.2 at Resistance RAM of Memory Strategies International in 2012. IEEE Transactions on Electron Devices, Vol. 59, No. 9, pp.2302-2307 (1 September 2012). IF: 2.358
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Yujeong Seo, Yeon Soo Kim, Minyeong Song, Ho-Myoung An, Hee-Dong Kim, Yun-Mo Sung, and Tae Geun Kim “Electrical Properties of Cr-doped SrTiO3 Films as a Switch Material in ReCTF Devices” Microelectronics Engineering, Vol. 98, No. MNE2011-PART2, pp.321-324 (1 October 2012). IF: 1.338
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Ho-Myoung An, Hee-Dong Kim, Hee-Wook You, Kyeong Heon Kim, Yun Mo Sung, Won-Ju Cho, and Tae Geun Kim “Application of nanosphere lithography to charge trap flash memories with patterned Si3N4 trap layers” Microelectronics Engineering, Vol. 98, No. MNE2011-PART2, pp.347-350 (1 October 2012). IF: 1.338
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Min Yeong Song, Yujeong Seo, Yeon Soo Kim, Hee Dong Kim, Ho-Myoung An ,Bae Ho Park, Yun Mo Sung, and Tae Geun Kim “Realization of One-Diode–Type Resistive-Switching Memory with Cr-SrTiO3 Film” Applied Physics Express, Vol. 5, No. 9, p.091202 (28 August 2012). IF: 2.567
2011 (SCI : 7)
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Hee-Dong Kim, Ho-Myoung An, Eui Bok Lee, and Tae Geun Kim “Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices” The article was selected in chapter 5.8 at Resistance RAM of Memory Strategies International in 2012. IEEE Transactions on Electron Devices, Vol.58, No.10, pp.3566-3573 (October 21 2011). IF: 2.358
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Hee-Dong Kim, Ho-Myoung An, Yu Jeong Seo, Tae Geun Kim “Transparent Resistive Switching Memory using ITO/AlN/ITO Capacitors” IEEE Electron Device Letters, Vol. 32, No. 8, pp.1125-1127 (1 August 2011). IF: 3.023 The article was selected in chapter 14 at Resistance RAM of Memory Strategies International in 2012.
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Hee-Dong Kim, Ho-Myoung An, and Tae Geun Kim “Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen post annealing treatment” Journal of Applied Physics, Vol. 109, No. 1, p.016105 (6 January 2011). IF: 2.185
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Hee-Dong Kim, Ho-Myoung An, Yujeong Seo, Yongjie Zhang, Ki-Hyun Nam, and Hong-Bay Chung and Tae Geun Kim “Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells” Semiconductor Science and Technology, Vol.25, No. 6 p.065002 (April 2010). IF: 2.206 The article was selected as the highlight of SST in 2011.
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Yujeong Seo, Ho-Myung An, Hee-Dong Kim, In Rok Hwang, Sa Hwan Hong, Bae Ho Park and Tae Geun Kim "High Speed and Low Voltage Performance in a Charge Trapping Flash Memory using a NiO Tunnel Junction" Journal of Physics D: Applied Physics, Vol. 44, No. 15, p.155105 (1 April, 2011). IF: 2.528
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Ho-Myoung An, Hee-Dong Kim, Tae Geun Kim “Multilevel Programming at a Low-Voltage Step using Junction Avalanche Hot Carrier Injections” Applied Physics Letter, Vol. 98, No. 15, p.153503 (11 April 2011). IF: 3.794
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Ho-Myoung An, Hee-Dong Kim, Yongjie Zhang, Yu Jeong Seo, and Tae Geun Kim “A substrate-bias assisted hot electron injection method for high-speed, low-voltage and multi-bit flash memories” Japanese Journal of Applied Physics, Vol. 50, No. 12, pp.124201-124201 (16 November 2011). IF: 1.057
2010 (SCI : 5)
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Hee-Dong Kim, Ho-Myoung An, Yongjie Zhang, Yu Jeong Seo, Jong Sun Park, Tae Geun Kim “Negative-/Positive-Bias-Instability Analysis of the Memory Characteristics Improved by Hydrogen Postannealing in MANOS Capacitors” IEEE Transactions on Device and Materials Reliability, Vol.10, No.2, pp.295-300 (20 June 2010). IF: 1.544 The article was selected in chapter 14 at Flash of Memory Strategies International in 2012.
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Hee-Dong Kim, Ho-Myoung An, Yongjie Zhang, Yu Jeong Seo, Jong Sun Park, Tae Geun Kim “Hydrogen Passivation Effects under Negative Bias Temperature Instability Stress in Metal/Silicon-Oxide/Silicon-Nitride/Silicon-Oxide/Silicon Capacitors for Flash Memories” Microelectronics Reliability, Vol. 50, No. 1, pp.21-25, (January 2010). IF: 1.338
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Ho-Myoung An, Hee-Dong Kim, Yu Jeong Seo, Kyoung Chan Kim, Yun Mo Sung, Sang-Mo Koo, Jung-Hyuk Koh, Tae Geun Kim “Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/ silicon capacitors with blocking oxide layers formed under the radical oxidation process” Journal of Nanoscience and Nanotechnology, Vol.10, No.7, pp.4701-4705 (July 2010). IF: 1.339
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Ho-Myoung An, Eui Bok Lee, Yu Jeong Seo, Hee-Dong Kim, and Tae Geun Kim “A new class of charge-trap flash memory with resistive switching mechanisms” IEEE Transactions on Electron Devices, Vol. 57, No.10, pp.2398-2404 (19 October 2010). IF: 2.358
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Ho-Myoung An, Eui Bok Lee, Yu Jeong Seo, Hee-Dong Kim, and Tae Geun Kim “A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon–Oxide–Nitride–Oxide–Silicon Device for Reliable Four-Bit/Cell Operations” Japanese Journal of Applied Physics, Vol. 49, p.114203 (22 November 2010). IF: 1.067
2009 (SCI : 3)
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Ho-Myoung An, Yu Jeong Seo, Hee-Dong Kim, Kyoung Chan Kim, Jong-Guk Kim, Won-Ju Cho, Jung-Hyuk Koh, Yun Mo Sung, Tae Geun Kim “Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses” Thin Solid Films, Vol. 517, No.18, p.5589 (23 April 2009). IF: 1.867
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Dong Ho Kim, Hong Joo Song, Cheong Hyun Roh, Cheol-Koo Hahn, Noriaki Tsurumachi, Hee-Dong Kim and Tae Geun Kim “Dark Current Analysis in InAs Quantum-dot APDs with Different Mesa Structures” Journal of the Korean Physical Society, Vol. 55, No.3, pp.1215-1218 (September 2009). IF: 0.425
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Yu Jeong Seo, Hee-Dong Kim, Ho-Myung An and Tae Geun Kim "Improved Performance in Charge-Trap-Type Flash Memories with an Al2O3 Dielectric by Using Bandgap Engineering of Charge-Trapping Layers" Journal of the Korean Physical Society, Vol. 55, No. 6, p.2689 (Dec, 2009). IF: 0.425
2008 (SCI : 3)
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Hee-Dong Kim, Ho-Myoung An, Kyoung Chan Kim, Yu Jeong Seo, Tae Geun Kim “Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories” Semiconductor Science and Technology, Vol.23, No. 7, p.075046 (4 June 2008). IF: 2.206
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Yu Jeong Seo, Kyoung Chan Kim, Hee-Dong Kim, Mun Sic Joo, Ho-Myoung An, Tae Geun Kim “Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2” Applied Physics Letters, Vol. 93, No. 6, p.063508 (13 August 2008). IF: 3.515
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Yu Jeong Seo, Kyoung Chan Kim, Hee-Dong Kim, Ho-Myoung An, Tae Geun Kim “Study of Hole Traps in the Oxide-Nitride-Oxide Structure of the SONOS Flash Memory” Journal of the Korean Physical Society, Vol. 53, No. 6, p.3302 (December 2008). IF: 0.42