Prof. Hee-Dong Kim
Experience
03/2015- present
Assistant/Associate Professor, Dept. of Electrical Engineering, Sejong University, South Korea
03/2023- present
Associate Professor, Dept. of Semiconductor System Engineering, Sejong University, South Korea
03/2021- 02/2022
Visiting Professor, Dept. of Technology, IHP Microelectronics: Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany
07/2014- 02/2015
Scientist, Dept. of Technology, IHP Microelectronics: Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany
03/2014-06/2014
Research Professor, School of Electrical Engineering, Korea University, South Korea
12/2001-07/2002
Internship, Medical Device Center, Korea Testing Laboratory, Seoul, South Korea
e-mail :
khd0708 at sejong dot ac dot kr
Education
09/2009-02/2014
Ph.D., School of Electrical Engineering, Korea University, South Korea
- Advisor: Professor Tae Geun Kim
- Thesis title: Study of Resistive Switching Characteristics of Metal Nitride-Based Resistive Random Access Memory
02/2007-08/2009
M.S., Dept. of Micro Device Engineering, Korea University, South Korea
- Advisor: Professor Tae Geun Kim
- Thesis title: A Study on the Electrical Properties of Charge Trap Flash Memory
03/2003-02/2007
B.S., Dept. of Electronic/Information Engineering, Korea University, South Korea
Professional Activities
11/2014-present
Reviewer in IEEE Electron Device Letters (EDL)
05/2015-present
Reviewer in Scientific Reports (Nature Publishing Group: NPG)
07/2015-present
Reviewer in Journal of Alloys and Compounds (JALCOM)
06/2015-present
Reviewer in Solid State Electronics (SEE)
08/2015-present
Reviewer in Journal of Semiconductor Technology and Science (JSTS)
06/2015-present
Reviewer in Trans. Electr. Electron. Mater. (TEEM)
Honors / Awards : 13
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Samsung 휴먼테크 논문대상_Physical Devices & Science 분과 입선, 2014 년2월12일
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Seoul Science Scholarship by Seoul Scholarship Foundation, 25 August 2009.
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The bronze Prize at the 2010 IEEE student paper contest, sponsored by IEEE Korea Council, 4 December 2010, “Ultrafast Bipolar Switching Characteristics Observed in AlN-based ReRAM”.
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Samsung Scholarship by Samsung electronics, 29 April 2011.
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The article, Semicond. Sci. Technol, Vol.25, No. 6 p. 065002, was selected as the highlight within 2011 SST journals., “Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells”
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The bronze Prize at the 2011 IEEE student paper contest, sponsored by IEEE Korea Council, 03 December 2011, “resistive switching phenomena observed in ZrN-based memory cells”.
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The selection at the Outstanding Researcher by Institute for Information and Communication Technology of Korea University, 27 February 2011.
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Best Poster Award, 2012 The Korean Vacuum Conference by The Korean Vacuum Society, 21 August 2012., “Reliability analysis of charge trap flash (CTF) memory devices with different thicknesses of Si3N4 layer”
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Selection of TOP 5 technology at 2012 Inter-departmental government-research-development outstanding results by Korea Institute of S&T Evaluation and Planning, 16 November 2012.
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Excellent oral presentation Award at International Conference on Solid-State and Integrated Circuit (ICSIC 2013), Vancouver, Canada, 14 April 2013., “Improved Reliability of HfOx-based Resistive Switching Memory Cells due to a Hydrogen-post annealing”
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Best Poster Award at International Nanotech (Nano Korea) Symposium, Seoul, Korea, 12 July 2013, “Performance breakthrough of vertical-type GaN LEDs using nanofilament-based wide-bandgap transparent conductive electrodes”
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Best Paper Award, Photonics Conference 2013 by Optical Society of Korea, The Korean Institute of Communications and Information Sciences, The Institute of Electronics Engineers of Korea, The Korean Institute of Electrical Engineers, and IEEE Photonics Society, 20 November 2013. “Electrical and Optical Properties of Aluminum Nitride-based Transparent Conductive Electrodes with Conductive Filament”
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Best Poster Paper Award, at International Conference on Advanced Electromaterials (ICAE 2013), Jeju, Korea, 12-15 November 2013., “Improved Electrical and Optical Properties of Indium Gallium Tin Oxide Films via Hydrogen Post-annealing”
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Best Paper Award, Photonics Conference 2012 by Optical Society of Korea, The Korean Institute of Communications and Information Sciences, The Institute of Electronics Engineers of Korea, The Korean Institute of Electrical Engineers, and IEEE Photonics Society, 6 December 2012. “Fabrication methods of the transparent conductivity oxide (TCO) for deep-UV LED devices by forming ITO-rod”